Abstract

The purpose of this thesis is to study and fully comprehend how to realize a very high performance sub-bandgap (low-voltage) structure. Physics of semiconductor devices has been analyzed before beginning the design of the voltage reference itself. New formulas, as practical as accurate, will be derived. Parallel to this design activity, it was possible to study an already developed sub-bandgap structure, comparing measurements to simulation results. Layout and extracted simulations have also been taken into account