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Chiocchetta, Francesca (2018) Characterization of the mechanisms of charge Trapping in GaN Vertical devices. [Magistrali biennali]

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Abstract

In this master thesis a new type of transistor is analyzed: the GaN Vertical Fin FET Transistor. This kind of transistor is made on GaN, a wide bandgap semiconductor which is a promising material for the future power electronics . Fin FET Transistor is based on a fin-architecture and the current flows vertically through a GaN made nanometer-sized channel having a MOS stack on the sides. In this work different measurements are performed in order to see the variation of the threshold voltage and channel resistance of the transistor varying the fin width and external parameters such as temperature and exposure to UV-light. Oxide trapping phenomena are analysed by applying to the gate an increasing positive bias potential and for increasing periods of time. Simulations are performed in order to further analyze the results and give an extensive explanation of the charge trapping behaviour in different bias conditions.

Item Type:Magistrali biennali
Corsi di Diploma di Laurea:Scuola di Scienze > Fisica
Uncontrolled Keywords:GaN, Vertical Transistor, power electronics, threshold voltage, Oxide trapping
Subjects:Area 02 - Scienze fisiche > FIS/07 Fisica applicata (a beni culturali, ambientali, biologia e medicina)
Codice ID:62194
Relatore:Meneghini, Matteo and Cesca, Tiziana
Correlatore:Ruzzarin, Maria Stella
Data della tesi:30 November 2018
Biblioteca:Polo di Scienze > Dip. Fisica e Astronomia "Galileo Galilei" - Biblioteca
Tipo di fruizione per il documento:on-line per i full-text
Tesi sperimentale (Si) o compilativa (No)?:Yes

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